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A Wide-Bandwidth PVT-Reconfigurable CMOS Power Amplifier with an Integrated Tunable-Output Impedance Matching Network.

Published version
Peer-reviewed

Type

Article

Change log

Authors

Mariappan, Selvakumar  ORCID logo  https://orcid.org/0000-0002-9659-6894
Rajendran, Jagadheswaran  ORCID logo  https://orcid.org/0000-0003-0313-8462
Kumar, Narendra 
Othman, Masuri 
Nathan, Arokia 

Abstract

This paper proposes a wideband CMOS power amplifier (PA) with integrated digitally assisted wideband pre-distorter (DAWPD) and a transformer-integrated tunable-output impedance matching network. As a continuation of our previous research, which focused only on linearization tuning for wideband and PVT, this work emphasized improving the maximum output power, gain and PAE across the PVT variations while maintaining the linearity for a wide frequency bandwidth of 1 GHz. The DAWPD is employed at the driver stage to realize a pre-distorting characteristic for wideband linearization. The addition of the tunable-output impedance matching technique in this work provides stable output power, PAE and gain across the PVT variations, through which it improves the design's robustness, reliability and production yield. Fabricated in CMOS 130 nm with an 8-metal-layer process, the DAWPD-PA with tunable-output impedance matching can achieve an operating frequency bandwidth of 1 GHz from 1.7 to 2.7 GHz. The DAWPD-PA attained a maximum output power of 27 to 28 dBm with a peak PAE of 38.8 to 41.3%. The power gain achieved was 26.9 to 29.7 dB across the targeted frequencies. In addition, when measured with a 20 MHz LTE modulated signal, the DAWPD-PA achieved a linear output power and PAE of 24.0 to 25.1 dBm and 34.5 to 38.8% across the frequency, respectively. On top of that, in this study, the DAWPD-PA is proven to be resilient to process-voltage-temperature (PVT) variations, where it achieves stable performances via the utilization of the proposed tuning mechanisms, mainly contributed by the proposed transformer-integrated tunable-output impedance matching network.

Description

Keywords

CMOS, adjacent channel leakage ratio (ACLR), back-off output power (PBO), digitally assisted wideband predistorter (DAWPD), error vector magnitude (EVM), power amplifier (PA), power-added efficiency (PAE), process-voltage-temperature (PVT)

Journal Title

Micromachines (Basel)

Conference Name

Journal ISSN

2072-666X
2072-666X

Volume Title

14

Publisher

MDPI AG
Sponsorship
Malaysian Ministry of Higher Education's Fundamental Research Grant Scheme (FRGS/1/2019/TK04/USM/02/14)
CREST Malaysia (PCEDEC/6050415)