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Modelling radiation damage to pixel sensors in the ATLAS detector

Published version
Peer-reviewed

Type

Article

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Authors

Aaboud, M 
Aad, G 
Abbott, B 
Abbott, DC 
Abdinov, O 

Abstract

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤1015 1 MeV neq/cm2).

Description

Keywords

Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc), Radiation-hard detectors, Solid state detectors

Journal Title

Journal of Instrumentation

Conference Name

Journal ISSN

1748-0221
1748-0221

Volume Title

14

Publisher

IOP Publishing
Sponsorship
Science and Technology Facilities Council (ST/N000234/1)