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Comparing h-BN and MgO tunnel barriers for scaled magnetic tunnel junctions

Published version
Peer-reviewed

Repository DOI


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Authors

Robertson, J 
Naganuma, H 
Lu, H 

Abstract

jats:titleAbstract</jats:title> jats:pMagnetic tunnel junctions (MTJ) with MgO/Fe based interfaces and perpendicular spin directions form the basis of present-day spin-transfer torque magnetic random-access memories. Many semiconductor devices, such as CMOS transistors, have undergone fundamental changes in materials design as dimensional scaling has progressed. Here, we consider how future scaling of MTJs might affect materials choices, comparing different tunnel barriers, such as 2D h-BN materials with existing MgO tunnel barriers. The different interfacial sites of h-BN on Ni or Co are compared in terms of their physisorptive or chemisorptive bonding and how this affects their transmission magnetoresistance, ability to create perpendicular magnetic isotropy, and unusual factors such as the “pillow effect.” These effects are balanced by the beneficial chemical thermodynamics of the existing MgO barriers and MgO/Fe interfaces.</jats:p>

Description

Keywords

spintronics, layered materials, magnetic tunnel junctions, scaling

Journal Title

JAPANESE JOURNAL OF APPLIED PHYSICS

Conference Name

Journal ISSN

0021-4922
1347-4065

Volume Title

62

Publisher

IOP Publishing