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Orientation of hole quantum Hall nematic phases in an out-of-plane electric field

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Croxall, AF 
Sfigakis, F 
Farrer, I 
Ritchie, DA 


We present observations of an anisotropic resistance state at Landau level filling factor ν=5/2 in a two-dimensional hole system (2DHS), which occurs for certain values of hole density p and average out-of-plane electric field E. The 2DHS is induced by electric field effect in an undoped GaAs/AlGaAs quantum well, where front and back gates allow independent tuning of p and E, and hence the symmetry of the confining potential. For p ≈ 2 × 1011 cm−2 and E ≈ -2 × 105 V/m, the magnetoresistance along <01> greatly exceeds that along <011>, suggesting the formation of a quantum Hall nematic or "stripe" phase. Reversing the sign of E rotates the stripes by 90. We suggest this behavior may arise from the mixing of the hole Landau levels and a combination of the Rashba and Dresselhaus spin-orbit coupling effects.



5108 Quantum Physics, 51 Physical Sciences, 5104 Condensed Matter Physics

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Physical Review B

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American Physical Society (APS)


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Engineering and Physical Sciences Research Council (EP/J003417/1)
Engineering and Physical Sciences Research Council (EP/H017720/1)
The Herchel Smith Fund at the University of Cambridge, UK. Trinity College Cambridge, UK Toshiba Research Europe Limited