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Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

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Efthymiou, L 
Longobardi, GCG 
Lin, E 
Chien, T 


Similarly to the unipolar SiC Schottky diodes, AlGaN/GaN Schottky devices have been suggested to have a negligible reverse recovery current during turn-off and can therefore be switched at very high frequencies with low power losses [1-2]. This study aims to investigate this claim by comparing the reverse recovery characteristic of an AlGaN/GaN diode with that of a SiC diode and a fast recovery Si P-N diode for the same current (4 A) and voltage rating (700 V). TCAD models of a SiC Schottky diode and an AlGaN/GaN diode have been developed and calibrated against fabricated devices for a better physical understanding of the experimentally observed results. The analysis is based on the trade-off between on-state and reverse recovery parameters at both room and high temperatures. Experimental and TCAD results show that while the AlGaN/GaN heterostructure Schottky diode is expected to provide a significant improvement in switching performance when compared to the conventional bipolar Si P-N diodes, the SiC diode offers a more favourable trade-off between on-state and reverse recovery.



51 Physical Sciences, 40 Engineering, 4018 Nanotechnology

Journal Title

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Conference Name

International Symposium on Power Semiconducotr Devices (ISPSD)

Journal ISSN


Volume Title


Engineering and Physical Sciences Research Council (EP/K035282/1)
Engineering and Physical Sciences Research Council (EP/L007010/1)