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Multi-pulse atomic layer deposition of p-type SnO thin films: growth processes and the effect on TFT performance

Published version
Peer-reviewed

Repository URI

https://www.repository.cam.ac.uk/handle/1810/348893

Repository DOI

https://doi.org/10.17863/CAM.96320

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Published version (2 MB)
 Supporting information (6.86 MB)
 Bibliographic metadata (122.05 KB)

Type

Article

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Abstract

jats:pP-type SnO thin films have been deposited using multiple pulses of a novel Sn(jats:scii</jats:sc>) precursor per ALD cycle. The study looks at the effect on TFT performance and AFM analysis has explored the change in the growth processes during deposition.</jats:p>

Description

Acknowledgements: This work is supported by the EPSRC through the Centre for Doctoral Training in Integrated Photonic and Electronic Systems (IPES) under grant no. EP/L015455/1, and through project grants EP/M013650/1 and EP/P027032/1. For the purpose of open access, the author has applied a Creative Commons Attribution (CC BY) licence to any Author Accepted Manuscript version arising from this submission.

Keywords

40 Engineering, 4016 Materials Engineering, 34 Chemical Sciences

Journal Title

Journal of Materials Chemistry C

Conference Name

Journal ISSN

2050-7526
2050-7534

Volume Title

Publisher

Royal Society of Chemistry (RSC)

Publisher DOI

https://doi.org/10.1039/d3tc00255a

Rights

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Sponsorship
Engineering and Physical Sciences Research Council (EP/M013650/1)
Engineering and Physical Sciences Research Council (EP/P027032/1)
Engineering and Physical Sciences Research Council (EP/L015455/1)

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