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Analysis of InAs/GaAs quantum dot solar cells using Suns-Voc measurements

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Beattie, NS 
Zoppi, G 
See, P 
Duchamp, M 


The performance of InAs/GaAs quantum dot solar cells was investigated up to an optical concentration of 500-suns. A high temperature spacer layer between successive layers of quantum dots was used to reduce the degradation in the open circuit voltage relative to a control device without quantum dots. This improvement is explained using optical data while structural imaging of quantum dot stacks confirm that the devices are not limited by strain. The evolution of the open circuit voltage as a function of number of suns concentration was observed to be nearly ideal when compared with a high performance single junction GaAs solar cell. Analysis of Suns-Voc measurements reveal diode ideality factors as low as 1.16 which is indicative of a low concentration of defects in the devices.



InAs quantum dots, Concentrator, Solar cell

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Solar Energy Materials and Solar Cells

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EC FP7 CP WITH CSA (312483)
The authors acknowledge financial support from the European Union under the Seventh Framework Programme under a contract for an Integrated Infrastructure Initiative. Reference 312483 – ESTEEM2.