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Plasmon-Induced Trap State Emission from Single Quantum Dots.

Accepted version
Peer-reviewed

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Authors

Ojambati, Oluwafemi S 
Sokołowski, Kamil 

Abstract

Charge carriers trapped at localized surface defects play a crucial role in quantum dot (QD) photophysics. Surface traps offer longer lifetimes than band-edge emission, expanding the potential of QDs as nanoscale light-emitting excitons and qubits. Here, we demonstrate that a nonradiative plasmon mode drives the transfer from two-photon-excited excitons to trap states. In plasmonic cavities, trap emission dominates while the band-edge recombination is completely suppressed. The induced pathways for excitonic recombination not only shed light on the fundamental interactions of excitonic spins, but also open new avenues in manipulating QD emission, for optoelectronics and nanophotonics applications.

Description

Keywords

5108 Quantum Physics, 40 Engineering, 51 Physical Sciences, 4018 Nanotechnology, 5104 Condensed Matter Physics, Biotechnology, Nanotechnology, Bioengineering

Journal Title

Phys Rev Lett

Conference Name

Journal ISSN

0031-9007
1079-7114

Volume Title

126

Publisher

American Physical Society (APS)

Rights

All rights reserved
Sponsorship
Engineering and Physical Sciences Research Council (EP/L027151/1)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (829067)
European Commission Horizon 2020 (H2020) Research Infrastructures (RI) (861950)
European Commission Horizon 2020 (H2020) Marie Sk?odowska-Curie actions (706425)
Engineering and Physical Sciences Research Council (EP/G060649/1)
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