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High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

Published version
Peer-reviewed

Repository URI

https://www.repository.cam.ac.uk/handle/1810/261389

Repository DOI

https://doi.org/10.17863/CAM.6563

Files

Accepted version (2.21 MB) (Embargoed until: 2100-01-01)
 Published version (1.05 MB)

Type

Article

Change log

Authors

Zhao, B 
Abdi-Jalebi, M 
Tabachnyk, M 
Glass, H 
Kamboj, VS 
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Abstract

Low-bandgap CH3NH3(Pbx Sn1–x)I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5–1.1 eV) demonstrating high surface coverage and superior optoelectronic properties have been fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm2 V−1 s−1) intrinsic carrier mobilities.

Description

Keywords

high mobility perovskites, lead–tin perovskite PV, low-bandgap perovskites, Urbach energy

Journal Title

Advanced Materials

Conference Name

Journal ISSN

0935-9648
1521-4095

Volume Title

29

Publisher

Wiley

Publisher DOI

https://doi.org/10.1002/adma.201604744

Rights

Attribution 4.0 International Repository logo
Sponsorship
Engineering and Physical Sciences Research Council (EP/M005143/1)
Engineering and Physical Sciences Research Council (EP/M023532/1)
Engineering and Physical Sciences Research Council (Grant ID: EP/M005143/1), India-UK APEX project, Winton Programme (Cambridge) for the Physics of Sustainability, Cambridge Trust, China Scholarship Council, Nava Technology Limited (PhD scholarship), LDRD program, LANL
Relationships
Is supplemented by:
https://doi.org/10.17863/CAM.5871

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Scholarly Works - Physics
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