Temperature Effects in the Band Structure of Topological Insulators.


Type
Article
Change log
Authors
Monserrat, Bartomeu 
Vanderbilt, David 
Abstract

We study the effects of temperature on the band structure of the Bi_{2}Se_{3} family of topological insulators using first-principles methods. Increasing temperature drives these materials towards the normal state, with similar contributions from thermal expansion and from electron-phonon coupling. The band gap changes with temperature reach 0.3 eV at 600 K, of similar size to the changes caused by electron correlation. Our results suggest that temperature-induced topological phase transitions should be observable near critical points of other external parameters.

Description
Keywords
0912 Materials Engineering
Journal Title
Phys Rev Lett
Conference Name
Journal ISSN
0031-9007
1079-7114
Volume Title
117
Publisher
American Physical Society (APS)