Strain engineering of the silicon-vacancy center in diamond


Type
Article
Change log
Authors
Meesala, S 
Sohn, YI 
Pingault, B 
Shao, L 
Atikian, HA 
Abstract

We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.

Description
Keywords
quant-ph, quant-ph, cond-mat.mes-hall
Journal Title
Physical Review B
Conference Name
Journal ISSN
2469-9950
2469-9969
Volume Title
97
Publisher
American Physical Society (APS)
Sponsorship
Leverhulme Trust (RPG-2013-337)
European Commission (289795)
Engineering and Physical Sciences Research Council (EP/M013243/1)
EPSRC (1498341)