A 53-µA-Quiescent 400-mA Load Demultiplexer Based CMOS Multi-Voltage Domain Low Dropout Regulator for RF Energy Harvester.

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Poongan, Balamahesn 
Rajendran, Jagadheswaran  ORCID logo  https://orcid.org/0000-0003-0313-8462
Mariappan, Selvakumar  ORCID logo  https://orcid.org/0000-0002-9659-6894
Parameswaran, Pharveen 

A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work. The MVD-LDO has a 1.5 V supply voltage headroom and regulates an output from four voltage domains ranging from 0.8 V to 1.4 V, with a high current efficiency of 99.98% with quiescent current of 53 µA with the aid of an integrated low-power demultiplexer controller which consumes only 68.85 pW. The fabricated chip has an area of 0.149 mm2 and can deliver up to 400 mA of current. The MVD-LDO's line and load regulations are 1.85 mV/V and 0.0003 mV/mA for the low-output voltage domain and 3.53 mV/V and 0.079 mV/mA for the high-output voltage domain. The LDO consumes only 174.5 µW in standby mode, making it suitable for integrating with an RF energy harvester chip to power sensor nodes.


Peer reviewed: True

bandgap voltage reference, demultiplexer, feedback network, internet of things, multi-voltage domain low dropout, power management unit, radio frequency energy harvester, system on chip
Journal Title
Micromachines (Basel)
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Malaysian Ministry of Higher Education (FRGS/1/2019/TK04/USM/02/14)
CREST Malaysia (PCEDEC/6050415)