Coulomb drag resistivity as a function of temperature and carrier density in a GaAs/AlGaAs ambipolar double-quantum-well structure, configured as both and electron-hole and a hole-hole bilayer. These measurements were carried out at the Cavendish Laboratory, University of Cambridge, by the authors, in the period 2011 to 2013. Dataset also includes results of numerical modelling of the drag resistivity using the Boltzmann transport formalism and both the random phase and Hubbard approximations for screening. Further details of the research methods can be found in the associated publication.

This research data supports 'Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device', which is published in the 'Applied Physics Letters' journal.