Data set accompanying the letter "A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs ambipolar bilayers"

Name: Data set accompanying the letter "A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs ambipolar bilayers"
Published: 2017-02-15T11:00:45Z
Keywords: semiconductors, GaAs/AlGaAs, Coulomb drag, 2D bilayer, Excitons, Quantum Hall Effect, Ambipolar, Interacting electron systems

Siciliani de Cumis, U; Waldie, J; Croxall, AF; Taneja, D; Llandro, J; Farrer, I; Beere, HE; Ritchie, DA

doi:10.17863/CAM.7461

Data set accompanying the letter "A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs ambipolar bilayers"

Repository URI

https://www.repository.cam.ac.uk/handle/1810/262528

Repository DOI

https://doi.org/10.17863/CAM.7461

Files

acompletelaboratorysicilianidata.xlsx (241.54 KB)

Type

Dataset

Authors

Siciliani de Cumis, U

Waldie, Joanna

https://orcid.org/0000-0002-0839-6949

Croxall, AF

Taneja, D

Llandro, J

Description

Coulomb drag and magnetotransport data from the ambipolar GaAs/AlGaAs 2D bilayer devices described in the associated publication, measured by the authors at the Cavendish Laboratory, University of Cambridge UK, in the period October 2013 to April 2016. The data were measured at low temperature (90 mK to 4 K). The experimental methods are described in the associated publication.