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Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

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jats:titleAbstract</jats:title>jats:pTo extend the Moore’s law in 5 nm node, a large number of two dimensional (2D) materials and devices have been researched, among which the ‘cold’ metals 2H MSjats:sub2</jats:sub> (M = Nb, Ta) with unique band structures are expected to achieve the sub-60 mVdecjats:sup−1</jats:sup> subthreshold swing (SS). We explored the electronic properties and ballistic quantum transport performance of ‘cold’ metals and the corresponding MOSFETs with idealized structures. The studied ‘cold’ metal field-effect transistors (CM-FETs) based on the ‘cold’ metals are capable to fulfill the high-performance (HP) and low-dissipation (LP) goals simultaneously, as required by the International Technology Roadmap for Semiconductors (ITRS). Moreover, gaps of ‘cold’ metals CM-FETs also demonstrate negative differential resistance (NDR) property, allowing us to further extend the use of CM-FETs. Owing to the wide transmission path in the broken gap structure of NbSjats:sub2</jats:sub>/MoSjats:sub2</jats:sub> heterojunction, the 4110 μAμmjats:sup−1</jats:sup> peak current, several orders of magnitude higher than the typical tunneling diode, is achieved by NbSjats:sub2</jats:sub>/MoSjats:sub2</jats:sub> CM-FET. The largest peak-valley ratio (PVR) 1.1×10jats:sup6</jats:sup> is obtained by TaSjats:sub2</jats:sub>/MoSjats:sub2</jats:sub> CM-FET with jats:italicV</jats:italic>jats:subGS</jats:sub> = −1 V at room temperature. Our results claim that the superior on-state current, SS, cut-off frequency and NDR effect can be obtained by CM-FETs simultaneously. The study of CM-FETs provides a practicable solution for state-of-the-art logic device in sub 5 nm node for both more Moore roadmap and more than Moore roadmap applications.</jats:p>


Funder: the Fundamental Research Funds for the Central Universities


40 Engineering, 4016 Materials Engineering, 4009 Electronics, Sensors and Digital Hardware

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npj 2D Materials and Applications

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Springer Science and Business Media LLC
RCUK | Engineering and Physical Sciences Research Council (EPSRC) (EP/P005152/1, EP/P005152/1, EP/P005152/1, EP/P005152/1, EP/P005152/1)