Repository logo
 

Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

Published version
Peer-reviewed

Change log

Abstract

jats:titleAbstract</jats:title>jats:pTo extend the Moore’s law in 5 nm node, a large number of two dimensional (2D) materials and devices have been researched, among which the ‘cold’ metals 2H MSjats:sub2</jats:sub> (M = Nb, Ta) with unique band structures are expected to achieve the sub-60 mVdecjats:sup−1</jats:sup> subthreshold swing (SS). We explored the electronic properties and ballistic quantum transport performance of ‘cold’ metals and the corresponding MOSFETs with idealized structures. The studied ‘cold’ metal field-effect transistors (CM-FETs) based on the ‘cold’ metals are capable to fulfill the high-performance (HP) and low-dissipation (LP) goals simultaneously, as required by the International Technology Roadmap for Semiconductors (ITRS). Moreover, gaps of ‘cold’ metals CM-FETs also demonstrate negative differential resistance (NDR) property, allowing us to further extend the use of CM-FETs. Owing to the wide transmission path in the broken gap structure of NbSjats:sub2</jats:sub>/MoSjats:sub2</jats:sub> heterojunction, the 4110 μAμmjats:sup−1</jats:sup> peak current, several orders of magnitude higher than the typical tunneling diode, is achieved by NbSjats:sub2</jats:sub>/MoSjats:sub2</jats:sub> CM-FET. The largest peak-valley ratio (PVR) 1.1×10jats:sup6</jats:sup> is obtained by TaSjats:sub2</jats:sub>/MoSjats:sub2</jats:sub> CM-FET with jats:italicV</jats:italic>jats:subGS</jats:sub> = −1 V at room temperature. Our results claim that the superior on-state current, SS, cut-off frequency and NDR effect can be obtained by CM-FETs simultaneously. The study of CM-FETs provides a practicable solution for state-of-the-art logic device in sub 5 nm node for both more Moore roadmap and more than Moore roadmap applications.</jats:p>

Description

Funder: the Fundamental Research Funds for the Central Universities

Keywords

40 Engineering, 4016 Materials Engineering, 4009 Electronics, Sensors and Digital Hardware

Journal Title

npj 2D Materials and Applications

Conference Name

Journal ISSN

2397-7132
2397-7132

Volume Title

Publisher

Springer Science and Business Media LLC
Sponsorship
RCUK | Engineering and Physical Sciences Research Council (EPSRC) (EP/P005152/1, EP/P005152/1, EP/P005152/1, EP/P005152/1, EP/P005152/1)