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Room temperature quantum emitters in aluminum nitride epilayers on silicon

Accepted version
Peer-reviewed

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Authors

Kappers, Menno 
Ghosh, Saptarsi 

Abstract

Room temperature quantum emitters have been reported in aluminum nitride grown on sapphire, but until now have not been observed in epilayers grown on silicon. We report that epitaxial aluminum nitride grown on silicon by either plasma vapour deposition or metal-organic vapour phase epitaxy contain point-like emitters in the red to near-infrared part of the spectrum. We study the photon statistics and polarization of emission at a wavelength of 700 nm to 750 nm, showing signatures of quantized electronic states under pulsed and CW optical excitation. The discovery of quantum emitters in a material deposited directly on silicon can drive integration using industry standard 300mm wafers, established CMOS control electronics and low marginal-cost massmanufacturing.

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Keywords

Journal Title

Applied Physics Letters

Conference Name

Journal ISSN

0003-6951
1077-3118

Volume Title

Publisher

American Institute of Physics

Publisher DOI

Publisher URL

Sponsorship
EPSRC (via University of Sheffield) (unknown)
Engineering and Physical Sciences Research Council (EP/R03480X/1)
Engineering and Physical Sciences Research Council (EP/P00945X/1)