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Ni/Au contacts to corundum α-Ga2O3

Accepted version
Peer-reviewed

Type

Article

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Authors

Massabuau, Fabien 
Adams, Francesca 
Nicol, David 
Jarman, John 
Frentrup, Martin 

Abstract

jats:titleAbstract</jats:title> jats:pThe structural, chemical and electrical properties of Ni/Au contacts to atomic layer deposited α-Ga2O3 were investigated. Ni forms a Schottky contact with α-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was observed at the metal-semiconductor interface (unlike what is observed for other metals like Ti), and instead, the metallurgical processes of the Ni-Au bilayer dominate the electrical properties. It is found that 400-450oC is the optimal annealing temperature, which allows for metal diffusion to heal gaps at the metal/semiconductor interface, but is not sufficient for Ni and Au to significantly interdiffuse and form an alloy with compositional inhomogeneities.</jats:p>

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Journal Title

Japanese Journal of Applied Physics

Conference Name

Journal ISSN

0021-4922
1347-4065

Volume Title

Publisher

IOP Publishing