Repository logo

A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects

Change log


Paun, Maria-Alexandra  ORCID logo
Sallese, Jean-Michel 


jats:pIn order to provide the information on their Hall voltage, sensitivity, and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall cells has been developed. In this sense, the finite element model proposed by the authors in this paper contains both geometrical parameters (dimensions of the cells) and physical parameters such as the mobility, conductivity, Hall factor, carrier concentration, and the temperature influence on them. Therefore, a scalable finite element model in Cadence, for behavior simulation in circuit environment of CMOS Hall effect devices, with different shapes and technologies assessing their performance, has been elaborated.</jats:p>



51 Physical Sciences, 5104 Condensed Matter Physics

Journal Title

Advances in Condensed Matter Physics

Conference Name

Journal ISSN


Volume Title


Hindawi Limited