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Energetic disorder at the metal-organic semiconductor interface

Accepted version
Peer-reviewed

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Type

Article

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Authors

Novikov, SV 
Malliaras, GG 

Abstract

The physics of organic semiconductors is dominated by the effects of energetic disorder. We show that image forces reduce the electrostatic component of the total energetic disorder near an interface with a metal electrode. Typically, the variance of energetic disorder is dramatically reduced at the first few layers of organic semiconductor molecules adjacent to the metal electrode. Implications for charge injection into organic semiconductors are discussed. © 2006 The American Physical Society.

Description

Keywords

cond-mat.mtrl-sci, cond-mat.mtrl-sci

Journal Title

Physical Review B - Condensed Matter and Materials Physics

Conference Name

Journal ISSN

1098-0121
1550-235X

Volume Title

73

Publisher

American Physical Society (APS)
Sponsorship
This work was supported by the ISTC Grant No. 2207 and RFBR Grant Nos. 05-03-33206 and 03-03-33067. The research described in this publication was made possible in part by Award No. RE2-2524-MO-03 of the U.S. Civilian Research and Development Foundation for the Independent States of the Former Soviet Union (CRDF).