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Supplementary Material for "Low Temperature Behaviour of Ti/Al/Ti/Au Contacts to AlGaN/GaN Heterostructures"

Repository URI

https://www.repository.cam.ac.uk/handle/1810/365355

Repository DOI

https://doi.org/10.17863/CAM.106699
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Supplementary Material.pdf (633.82 KB)

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Dataset

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Authors

Adams, Francesca  ORCID logo  https://orcid.org/0009-0008-2033-2121

Description

This supplementary material contains fits of Frenkel-Poole emission and trap-assisted tunnelling to the current-voltage characteristics of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures, annealed at 700 °C for 30 s. The raw data for these fits will be provided in a later upload, alongside all other raw data for the paper this supports. Also given are transmission electron microscopy images of the AlGaN barrier in AlGaN/GaN heterostructures following annealing at different temperatures.

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The uploaded file is a PDF, with plots generated in Origin.

Keywords

Charge carrier processes, Cryogenic electronics, Gallium nitride, HEMTs, Ohmic contacts, Transmission electron microscopy

Publisher

Rights and licensing

Attribution 4.0 International (CC BY 4.0)
Except where otherwised noted, this item's license is described as Attribution 4.0 International (CC BY 4.0)
Sponsorship
Ministry of Business, Innovation and Employment (MBIE) (via Research Trust of Victoria University of Wellington) (RTVU2004)
Engineering and Physical Sciences Research Council (EP/R03480X/1)
Engineering and Physical Sciences Research Council (EP/P00945X/1)

Relationships

https://doi.org/10.17863/CAM.115326
Supplements:
https://www.repository.cam.ac.uk/handle/1810/380264
https://doi.org/10.1088/1361-6463/adafb5

Collections

Research Data - Materials Science and Metallurgy