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Combined SEM-CL and STEM investigation of green InGaN quantum wells

Published version
Peer-reviewed

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Authors

Jarman, J 
Kappers, MJ 
Oliver, RA 

Abstract

jats:titleAbstract</jats:title> jats:pThe microstructure of green-emitting InGaN/GaN quantum well (QW) samples grown at different temperatures was studied using cross-section scanning transmission electron microscopy (STEM) and plan-view cathodoluminescence (CL). The sample with the lowest InGaN growth temperature exhibits microscale variations in the CL intensity across the sample surface. Using STEM analysis of such areas, the observed darker patches do not correspond to any observable extended defect. Instead, they are related to changes in the extent of gross-well width fluctuations in the QWs, with more brightly emitting regions exhibiting a high density of such fluctuations, whilst dimmer regions were seen to have InGaN QWs with a more uniform thickness.</jats:p>

Description

Keywords

gallium nitride, green LEDs, quantum well, TEM, cathodoluminescence, AFM

Journal Title

Journal of Physics D: Applied Physics

Conference Name

Journal ISSN

0022-3727
1361-6463

Volume Title

54

Publisher

IOP Publishing
Sponsorship
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/R01146X/1)
Engineering and Physical Sciences Research Council (EP/R025193/1)