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Low-Temperature Epitaxy of Perovskite WO3 Thin Films under Atmospheric Conditions

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Sun, Z 
Yuan, Z 
Fairclough, SM 
Jan, A 


As Si electronics hits fundamental performance limits, oxide integration is emerging as a solution to augment the next generation of electronic and optical devices. Specifically, oxide perovskites provide diverse functionalities with a potential to create, tune and combine emergent phenomena at interfaces. High-level crystalline order is needed to realize these functionalities, often achieved through epitaxy. However, large-scale implementation in consumer devices faces challenges due to the need for high-temperature deposition in complex vacuum systems. We address this challenge using atmospheric pressure spatial chemical vapour deposition (AP-SCVD), a thin-film fabrication technique that can rapidly produce uniform films at sub-400°C temperatures under atmospheric conditions over ~cm2 areas. Thus, we demonstrate the deposition of epitaxial perovskite tungsten trioxide, WO3, thin films at a rate of 5 nm/min on single-crystal substrates at 350°C in open air - conditions enabling a high throughput process. The resulting films exhibit crystallographic and electronic properties comparable to vacuum-based growth above 500°C. The high-quality epitaxy is attributed to the energetics of the exothermic decomposition reaction of the W[CO]6 precursors combined with the stabilization of a hot zone near the substrate surface. This work could pave the way for low- temperature atmospheric-pressure epitaxy of a wide range of other perovskite thin films.



40 Engineering, 4016 Materials Engineering, 34 Chemical Sciences, 3406 Physical Chemistry

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Small Structures

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Royal Academy of Engineering (RAEng) (CiET1819\24)
Engineering and Physical Sciences Research Council (EP/R008779/1)
European Commission Horizon 2020 (H2020) ERC (882929)
Royal Society (RGS\R1\221262)
Horizon Europe UKRI Underwrite ERC (EP/X034593/1)