Repository logo
 

High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition.

Accepted version
Peer-reviewed

Type

Article

Change log

Authors

De Fazio, Domenico 
Purdie, David G 
Ott, Anna K 
Braeuninger-Weimer, Philipp  ORCID logo  https://orcid.org/0000-0001-8677-1647
Khodkov, Timofiy 

Abstract

We report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to ∼70000 cm2 V-1 s-1 at room temperature and ∼120 000 cm2 V-1 s-1 at 9K. These are more than twice those of previous wet-transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room-temperature mobilities of ∼30 000 cm2 V-1 s-1. These results show that, with appropriate encapsulation and cleaning, room-temperature mobilities well above 10 000 cm2 V-1 s-1 can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.

Description

Keywords

CVD, charge carrier mobility, graphene, heterostructures, transfer

Journal Title

ACS Nano

Conference Name

Journal ISSN

1936-0851
1936-086X

Volume Title

13

Publisher

American Chemical Society (ACS)
Sponsorship
Engineering and Physical Sciences Research Council (EP/K016636/1)
Engineering and Physical Sciences Research Council (EP/L016087/1)
Engineering and Physical Sciences Research Council (EP/K01711X/1)
Engineering and Physical Sciences Research Council (EP/K017144/1)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (785219)