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Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires.

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cam.issuedOnline2018-01-11
dc.contributor.authorGiraud, Paul
dc.contributor.authorHou, Bo
dc.contributor.authorPak, Sangyeon
dc.contributor.authorSohn, Jung Inn
dc.contributor.authorMorris, Stephen
dc.contributor.authorCha, SeungNam
dc.contributor.authorKim, Jong Min
dc.contributor.orcidHou, Bo [0000-0001-9918-8223]
dc.date.accessioned2018-12-14T00:31:22Z
dc.date.available2018-12-14T00:31:22Z
dc.date.issued2018-02-16
dc.description.abstractWe demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V-1 s-1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W-1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.
dc.format.mediumPrint
dc.identifier.doi10.17863/CAM.34226
dc.identifier.eissn1361-6528
dc.identifier.issn0957-4484
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/286917
dc.languageeng
dc.language.isoeng
dc.publisherIOP Publishing
dc.publisher.urlhttp://dx.doi.org/10.1088/1361-6528/aaa2e6
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectnanowire FET
dc.subjectPbS
dc.subjectcolloidal synthesis
dc.subjectp-type nanowires
dc.subjectphototransistor
dc.subjectphotodetector
dc.titleField effect transistors and phototransistors based upon p-type solution-processed PbS nanowires.
dc.typeArticle
prism.issueIdentifier7
prism.publicationDate2018
prism.publicationNameNanotechnology
prism.startingPage075202
prism.volume29
pubs.funder-project-idEuropean Research Council (340538)
pubs.funder-project-idEuropean Commission Horizon 2020 (H2020) Research Infrastructures (RI) (685758)
rioxxterms.licenseref.startdate2018-02
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.typeJournal Article/Review
rioxxterms.versionVoR
rioxxterms.versionofrecord10.1088/1361-6528/aaa2e6

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