Doping Density Extraction of Plasma Treated Metal Oxide Thin Film Diodes by Capacitance–Voltage Analysis

Abstract

Abstract High quality thin film p‐n junction diodes with high rectification ratios and low ideality factors have been fabricated from metal oxides, such as amorphous oxide semiconductors (AOSs), and characterized. Plasma treatment of interfaces has been demonstrated to improve devices made from AOSs, using current–voltage (I–V) measurements. However, capacitance–voltage (C–V) measurements of the devices have been scarcely reported in the literature. Therefore, the focus of this work is characterization of cuprous oxide (Cu 2 O)/amorphous zinc‐tin oxide (a‐ZTO) thin film heterojunction diodes using C–V analysis. Performance differences of plasma‐treated and untreated diodes that are difficult to observe in I–V analysis are more prominent in C–V analysis. Moreover, C–V analysis allows extraction of charge density profiles, which is a measure of the defect state density that led to intrinsic doping. The variation of doping densities of the untreated diode across the full range of applied reverse bias is shown to be up to 2 orders of magnitude, while those of the treated diodes are within a factor of 10 only. Junction charge profiles, interfacial charge depletion, and accumulation that are key features of rectifying diodes are shown to be clearly distinct between untreated, nitrogen‐treated, and oxygen‐treated diodes, thus explaining why oxygen‐treated diodes are superior.