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Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene.

Published version
Peer-reviewed

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Authors

Winter, Zachary 

Abstract

Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a challenge due to the vast, interconnected parameter space. We introduce a fast-screening descriptor approach to demonstrate holistic data-driven optimization across the entirety of process steps for the graphene-Cu model system. We map the crystallographic dependences of graphene chemical vapor deposition, interfacial Cu oxidation to decouple graphene, and its dry delamination across inverse pole figures. Their overlay enables us to identify hitherto unexplored (168) higher index Cu orientations as overall optimal orientations. We show the effective preparation of such Cu orientations via epitaxial close-space sublimation and achieve mechanical transfer with a very high yield (>95%) and quality of graphene domains, with room-temperature electron mobilities in the range of 40000 cm2/(V s). Our approach is readily adaptable to other descriptors and 2D material systems, and we discuss the opportunities of such a holistic optimization.

Description

Keywords

Article, CVD, graphene, single crystal, dry transfer, data science, 2D material, high electron mobility

Journal Title

ACS Nano

Conference Name

Journal ISSN

1936-0851
1936-086X

Volume Title

17

Publisher

American Chemical Society (ACS)
Sponsorship
Engineering and Physical Sciences Research Council (EP/P005152/1)
Engineering and Physical Sciences Research Council (EP/M508007/1)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (785219)
EPSRC (EP/T001038/1)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (881603)