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A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs systems

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Cumis, USD 
Croxall, AF 
Taneja, D 
Llandro, J 


We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration we observe signs of magnetic-field-induced exciton condensation in the quantum Hall bilayer regime. In the same devices we can study the zero-magnetic-field e-h and h-h bilayer states using Coulomb drag. Very strong e-h Coulomb drag resistivity (up to 10% of the single layer resistivity) is observed at liquid helium temperatures, but no definite signs of exciton condensation are seen in this case. Self-consistent calculations of the electron and hole wavefunctions show this might be because the average interlayer separation is larger in the e-h case than the h-h case.



cond-mat.mes-hall, cond-mat.mes-hall

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Applied Physics Letters

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American Institute of Physics
Engineering and Physical Sciences Research Council (EP/J003417/1)
Engineering and Physical Sciences Research Council (EP/H017720/1)
European Commission (289968)
This work was funded by EPSRC EP/H017720/1 and EP/J003417/1 and European Union Grant INDEX 289968. A.F.C. acknowledges funding from Trinity College, Cambridge, and D.T. from St. Catherine's College, Cambridge. I.F. acknowledges funding from Toshiba Research Europe Limited.
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