Efficiency droop in zincblende InGaN/GaN quantum wells
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Peer-reviewed
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Article
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Abstract
jats:pCubic zincblende InGaN/GaN quantum wells are free of the electric fields that reduce recombination efficiency in hexagonal wurtzite wells.</jats:p>
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Acknowledgements: The authors would like to acknowledge funding and support from the Engineering and Physics Sciences Research Council (EPSRC) under Grant Codes EP/W034956/1, EP/R010250/1, EP/R01146X/1 and EP/W035871/1. D. Dyer would also like to acknowledge support through the EPSRC Doctoral Training Partnership.
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Nanoscale
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Journal ISSN
2040-3364
2040-3372
2040-3372
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Royal Society of Chemistry (RSC)
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Engineering and Physical Sciences Research Council (EP/W034956/1, EP/R010250/1, EP/R01146X/1, EP/W035871/1)