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Efficiency droop in zincblende InGaN/GaN quantum wells

Published version
Peer-reviewed

Repository DOI


Change log

Authors

Church, SA 
Kappers, MJ 
Halsall, MP 

Abstract

jats:pCubic zincblende InGaN/GaN quantum wells are free of the electric fields that reduce recombination efficiency in hexagonal wurtzite wells.</jats:p>

Description

Acknowledgements: The authors would like to acknowledge funding and support from the Engineering and Physics Sciences Research Council (EPSRC) under Grant Codes EP/W034956/1, EP/R010250/1, EP/R01146X/1 and EP/W035871/1. D. Dyer would also like to acknowledge support through the EPSRC Doctoral Training Partnership.

Keywords

Journal Title

Nanoscale

Conference Name

Journal ISSN

2040-3364
2040-3372

Volume Title

Publisher

Royal Society of Chemistry (RSC)
Sponsorship
Engineering and Physical Sciences Research Council (EP/W034956/1, EP/R010250/1, EP/R01146X/1, EP/W035871/1)