Porosity in Nitride Semiconductors: Supplementary Material
This dataset contains supplementary material to Peter Griffin's PhD thesis: "Porosity in Nitride Semiconductors". The data consists of one high resolution image and three videos:
Image1.png shows aligned optical and SEM images, revealing the corellation between the micro and macro structure of a thick porous layer. This data is discussed in section 188.8.131.52 of the thesis.
Video1.avi shows sequential SEM images of the region around a V-pit in a porous GaN DBR, milled by FIB, thus showing how the pore structure changes with depth. This data is discussed in section 4.2.3 of the thesis.
Video2.avi shows serial block-face imaging (SBI) data obtained from sequential FIB-SEM of a porous GaN DBR. This data is discussed in section 184.108.40.206 of the thesis.
Video3.mp4 shows the data shown in Video2, reconstructed to show the pore structure of each layer of a porous GaN DBR. This data is discussed in section 220.127.116.11 of the thesis.