Prototype nitride quantum light sources, particularly single photon emitters, have been successfully demonstrated, despite the challenges inherent in this complex materials system. The large band offset s available between different nitride alloys have allowed device operation at easily accessible temperatures. A wide range of approaches have been explored: not only self-assembled quantum dot growth but also lithographic methods for site-controlled nanostructure formation. All these approaches face common challenges, particularly strong background signals which contaminate the single photon stream and excessive spectral diffusion of the quantum dot emission wave length. If these challenges can be successfully overcome, then ongoing rapid progress in the conventional III-V semiconductors provides a roadmap for future progress in the nitrides.