Resonant excitation of quantum emitters in gallium nitride
We demonstrate resonant excitation of quantum emitters in gallium nitride (GaN). The emitters are stable under non-resonant excitation and exhibit nearly Fourier-transform-limited lines of ∼250 MHz under coherent excitation, the narrowest reported to date for GaN.
© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Engineering and Physical Sciences Research Council (EP/M011682/1)
Engineering and Physical Sciences Research Council (EP/R04502X/1)