Resonant excitation of quantum emitters in gallium nitride
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Peer-reviewed
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Abstract
We demonstrate resonant excitation of quantum emitters in gallium nitride (GaN). The emitters are stable under non-resonant excitation and exhibit nearly Fourier-transform-limited lines of ∼250 MHz under coherent excitation, the narrowest reported to date for GaN.
Description
© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Keywords
5102 Atomic, Molecular and Optical Physics, 51 Physical Sciences
Journal Title
Optica
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Journal ISSN
2334-2536
2334-2536
2334-2536
Volume Title
5
Publisher
Optica Publishing Group
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Publisher's own licence
Sponsorship
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/M011682/1)
Engineering and Physical Sciences Research Council (EP/R04502X/1)
Engineering and Physical Sciences Research Council (EP/M011682/1)
Engineering and Physical Sciences Research Council (EP/R04502X/1)