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Research data supporting ‘Giant Magnetoresistance in a CVD Graphene Constriction'

datacite.contributor.supervisorSmith, Charles G
datacite.issupplementto.doi10.1021/acsnano.1c09815
datacite.issupplementto.urlhttps://www.repository.cam.ac.uk/handle/1810/333407
dc.contributor.authorSmith, Luke
dc.contributor.authorBatey, Jack O
dc.contributor.authorAlexander-Webber, Jack
dc.contributor.authorBeere, Harvey
dc.contributor.authorHofmann, Stephan
dc.contributor.authorBurton, Oliver
dc.contributor.authorRitchie, David
dc.contributor.authorKelly, Michael
dc.contributor.authorJoyce, Hannah
dc.contributor.authorSmith, Charles G
dc.contributor.orcidSmith, Luke [0000-0003-2194-4708]
dc.contributor.orcidAlexander-Webber, Jack [0000-0002-9374-7423]
dc.contributor.orcidBeere, Harvey [0000-0001-5630-2321]
dc.contributor.orcidHofmann, Stephan [0000-0001-6375-1459]
dc.contributor.orcidBurton, Oliver [0000-0002-2060-1714]
dc.contributor.orcidRitchie, David [0000-0002-9844-8350]
dc.contributor.orcidJoyce, Hannah [0000-0002-9737-680X]
dc.contributor.orcidSmith, Charles [0000-0002-5611-0095]
dc.date.accessioned2022-01-24T10:56:52Z
dc.date.available2022-01-24T10:56:52Z
dc.descriptionThe zipped file contains the resistance and conductance data from measurements of graphene channels as a function of magnetic field, temperature, and source-drain bias. Data are provided in separate .txt files for each figure. The README.txt file contains the column information and units for plotting. Specific data included are: Figure 1: (1) Resistance of the primary graphene channel as a function of back gate voltage at magnetic field B = 0 T and temperature T = 0.29 K. (2) Derivative of resistance as a function of back gate voltage at different magnetic fields and back gate voltages. Figure 2: The graphene conductance as a function of magnetic field at temperatures T = 0.29, 0.6, 1, 2, 5, 8, 11.3, 14, 17.8 and 25 K. Figures 3 and 4: Graphene resistance as a function of total source-drain bias applied to the circuit at different back gate voltages V_G = 0.2, 0.26, and 0.32 V, at temperature T = 0.29 K. The graphene resistance at charge neutrality as a function of total source-drain bias is also provided at different temperatures T = 0.29, 2, 5, 8, 11.2, 14.1, 17.8, and 25 K. These data are measured at B = 0 T. Figure 5: Transfer characteristics from a second graphene device. (1) The resistance is given as a function of back gate voltage at magnetic fields B = 0, 3, 6, 9, and 12 T, at temperature T = 1.5 K. (2) The resistance as a function of back gate voltage and magnetic field. (3) The resistance as a function of back gate voltage at different temperatures T = 1.5, 5, 11, and 30 K, and magnetic field B = 12 T. (4) The maximum resistance of the charge neutrality peak ‘a’ near gate voltage ~42 V, and peak ‘b’ at gate voltage 18 V, as a function of B at T = 1.5 K. (5) The resistance of peaks ‘a’ and ‘b’ as a function of temperature at B = 12 T. Data contained in the supporting information is also provided. This includes: (1) The conductance of the primary graphene channel as magnetic field is swept at high carrier density, for temperatures from 0.29 to 25 K. (2) Graphene resistance as a function of total source-drain bias applied to the circuit at different back gate voltages V_G = 0.2, 0.28, 0.3, 0.32, 0.34, 0.38, 0.4, and 0.5 V, at temperature T = ~1.4 K. (3) Raman spectra of the graphene as a function of location over a 10 by 10 micron square area with a 1 micron grid spacing.
dc.formatThese data files can be opened using any text editor.
dc.identifier.doi10.17863/CAM.65353
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/332887
dc.rightsAttribution 4.0 International (CC BY 4.0)
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectMultiplexed Device Arrays
dc.subjectHigh-throughput testing
dc.subjectGraphene
dc.subjectCVD
dc.subjectGiant Magnetoresistance
dc.subjectFowler-Nordheim
dc.subjectDirect Tunneling
dc.titleResearch data supporting ‘Giant Magnetoresistance in a CVD Graphene Constriction'
dc.typeDataset
dcterms.formattxt
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P005152/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M508007/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/R029075/1)
rioxxterms.licenseref.urihttps://creativecommons.org/licenses/by/4.0/
rioxxterms.typeOther

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