Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer.
cam.issuedOnline | 2022-04-14 | |
dc.contributor.author | Chen, LuLu | |
dc.contributor.author | Adeyemo, Stephanie O | |
dc.contributor.author | Fonseka, H Aruni | |
dc.contributor.author | Liu, Huiyun | |
dc.contributor.author | Kar, Srabani | |
dc.contributor.author | Yang, Hui | |
dc.contributor.author | Velichko, Anton | |
dc.contributor.author | Mowbray, David J | |
dc.contributor.author | Cheng, Zhiyuan | |
dc.contributor.author | Sanchez, Ana M | |
dc.contributor.author | Joyce, Hannah J | |
dc.contributor.author | Zhang, Yunyan | |
dc.contributor.orcid | Fonseka, H Aruni [0000-0003-3410-6981] | |
dc.contributor.orcid | Mowbray, David J [0000-0002-7673-6837] | |
dc.contributor.orcid | Cheng, Zhiyuan [0000-0002-5603-968X] | |
dc.contributor.orcid | Sanchez, Ana M [0000-0002-8230-6059] | |
dc.contributor.orcid | Zhang, Yunyan [0000-0002-2196-7291] | |
dc.date.accessioned | 2022-05-16T01:02:36Z | |
dc.date.available | 2022-05-16T01:02:36Z | |
dc.date.issued | 2022-04-27 | |
dc.date.updated | 2022-05-16T01:02:36Z | |
dc.description | Funder: Leverhulme Trust | |
dc.description.abstract | The influence of nanowire (NW) surface states increases rapidly with the reduction of diameter and hence severely degrades the optoelectronic performance of narrow-diameter NWs. Surface passivation is therefore critical, but it is challenging to achieve long-term effective passivation without significantly affecting other qualities. Here, we demonstrate that an ultrathin InP passivation layer of 2-3 nm can effectively solve these challenges. For InAsP nanowires with small diameters of 30-40 nm, the ultrathin passivation layer reduces the surface recombination velocity by at least 70% and increases the charge carrier lifetime by a factor of 3. These improvements are maintained even after storing the samples in ambient atmosphere for over 3 years. This passivation also greatly improves the performance thermal tolerance of these thin NWs and extends their operating temperature from <150 K to room temperature. This study provides a new route toward high-performance room-temperature narrow-diameter NW devices with long-term stability. | |
dc.identifier.doi | 10.17863/CAM.84600 | |
dc.identifier.eissn | 1530-6992 | |
dc.identifier.issn | 1530-6984 | |
dc.identifier.other | 35420433 | |
dc.identifier.other | PMC9097579 | |
dc.identifier.uri | https://www.repository.cam.ac.uk/handle/1810/337181 | |
dc.language | eng | |
dc.language.iso | eng | |
dc.publisher | American Chemical Society (ACS) | |
dc.publisher.url | http://dx.doi.org/10.1021/acs.nanolett.2c00805 | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.source | nlmid: 101088070 | |
dc.source | essn: 1530-6992 | |
dc.subject | long-term stability | |
dc.subject | photonic properties | |
dc.subject | surface passivation | |
dc.subject | thin nanowire | |
dc.subject | ultrathin InP | |
dc.title | Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer. | |
dc.type | Article | |
prism.endingPage | 3439 | |
prism.issueIdentifier | 8 | |
prism.publicationName | Nano Lett | |
prism.startingPage | 3433 | |
prism.volume | 22 | |
pubs.funder-project-id | European Research Council (716471) | |
rioxxterms.licenseref.uri | https://creativecommons.org/licenses/by/4.0/ | |
rioxxterms.version | VoR | |
rioxxterms.versionofrecord | 10.1021/acs.nanolett.2c00805 |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- article.pdf
- Size:
- 2.69 MB
- Format:
- Adobe Portable Document Format
- Description:
- Published version
- Licence
- https://creativecommons.org/licenses/by/4.0/