Research data supporting "Reappearance of linear hole transport in an ambipolar undoped GaAs/AlGaAs quantum well"
Low-temperature electrical transport data for an ambipolar field-effect-transistor based on an undoped GaAs/AlGaAs quantum well. The data supports the Journal of Physics: Condensed Matter article, 'Reappearance of linear hole transport in an ambipolar undoped GaAs/AlGaAs quantum well.' The data were collected at the Cavendish Laboratory, University of Cambridge, in the period February 2015 to September 2015.
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Engineering and Physical Sciences Research Council (EP/J003417/1)
Engineering and Physical Sciences Research Council (EP/H017720/1)