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Fast, Non-Contact, Wafer-Scale, Atomic Layer Resolved Imaging of 2D Materials by Ellipsometric Contrast Micrography

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cam.issuedOnline2018-08-06
dc.contributor.authorBraeuninger-Weimer, PA
dc.contributor.authorHofmann, Stephan
dc.contributor.authorWang, Ruizhi
dc.contributor.orcidBraeuninger-Weimer, Philipp [0000-0001-8677-1647]
dc.contributor.orcidHofmann, Stephan [0000-0001-6375-1459]
dc.contributor.orcidWang, Ruizhi [0000-0002-3914-8649]
dc.date.accessioned2018-09-08T06:34:11Z
dc.date.available2018-09-08T06:34:11Z
dc.date.issued2018-08-28
dc.description.abstractAdequate characterisation and quality control of atomically thin layered materials (2DM) has become a serious challenge particularly given the rapid advancements in their large area manufacturing and numerous emerging industrial applications with different substrate requirements. Here, we focus on ellipsometric contrast micrography (ECM), a fast intensity mode within spectroscopic imaging ellipsometry, and show that it can be effectively used for non-contact, large area characterisation of 2DM to map coverage, layer number, defects and contamination. We demonstrate atomic layer resolved, quantitative mapping of chemical vapour deposited graphene layers on Si/SiO2-wafers, but also on rough Cu catalyst foils, highlighting that ECM is applicable to all application relevant substrates. We discuss the optimisation of ECM parameters for high throughput characterisation. While the lateral resolution can be less than 1 µm, we particularly explore fast scanning and demonstrate imaging of a 4’’ graphene wafer in 47 min at 10 µm lateral resolution, i.e. an imaging speed of 1.7 cm2/min. Furthermore, we show ECM of mono-layer hexagonal BN (h-BN) and of h-BN/graphene bilayers, highlighting that ECM is applicable to a wide range of 2D layered structures that have previously been very challenging to characterise and thereby fills an important gap in 2DM metrology.
dc.identifier.doi10.17863/CAM.27272
dc.identifier.eissn1936-086X
dc.identifier.issn1936-086X
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/279904
dc.language.isoeng
dc.publisherAmerican Chemical Society (ACS)
dc.publisher.urlhttp://dx.doi.org/10.1021/acsnano.8b04167
dc.subject2D material characterization
dc.subjectchemical vapor deposition
dc.subjectellipsometry
dc.subjectgraphene
dc.subjecth-BN
dc.subjectwafer-scale mapping
dc.titleFast, Non-Contact, Wafer-Scale, Atomic Layer Resolved Imaging of 2D Materials by Ellipsometric Contrast Micrography
dc.typeArticle
dcterms.dateAccepted2018-08-06
prism.endingPage8563
prism.issueIdentifier8
prism.publicationNameACS Nano
prism.startingPage8555
prism.volume12
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/G037221/1)
pubs.funder-project-idEuropean Research Council (279342)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/K016636/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P51021X/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M506485/1)
rioxxterms.licenseref.startdate2018-08-06
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.typeJournal Article/Review
rioxxterms.versionAM
rioxxterms.versionofrecord10.1021/acsnano.8b04167

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