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Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions.

Accepted version
Peer-reviewed

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Type

Article

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Authors

Lu, Haichang 
Guo, Yuzheng 
Robertson, John 

Abstract

Two-dimensional hexagonal boron nitride (h-BN) is studied as a tunnel barrier in magnetic tunnel junctions (MTJs) as a possible alternative to MgO. The tunnel magnetoresistance (TMR) of such MTJs is calculated as a function of whether the interface involves the chemi- or physisorptive site of h-BN atoms on the metal electrodes, Fe, Co, or Ni. It is found that the physisorptive site on average produces higher TMR values, whereas the chemisorptive site has the greater binding energy but lower TMR. It is found that alloying the electrodes with an inert metal-like Pt can induce the preferred absorption site on Co to become a physisorptive site, enabling a higher TMR value. It is found that the choice of physisorptive sites of each element gives more Schottky-like dependence of their Schottky barrier heights on the metal work function.

Description

Keywords

Fermi level pinning, Schottky barrier height, ab initio calculation, hexagonal boron nitride, magnetic tunnel junctions, tunnel magnetoresistance

Journal Title

ACS Appl Mater Interfaces

Conference Name

Journal ISSN

1944-8244
1944-8252

Volume Title

13

Publisher

American Chemical Society (ACS)

Rights

All rights reserved
Sponsorship
Engineering and Physical Sciences Research Council (EP/P005152/1)