Structural effects in UO$_2$ thin films irradiated with fission-energy Xe ions

Abstract

Uranium dioxide thin films have been successfully grown on LSAT (Al${10}$La$3$O${51}$Sr${14}$Ta$_7$) substrates by reactive magnetron sputtering. Irradiation by 92 MeV $^{129}$Xe$^{23+}$ ions to simulate fission damage that occurs within nuclear fuels caused microstructural and crystallographic changes. Initially flat and continuous thin films were produced by magnetron sputtering with a root mean square roughness of 0.35 nm determined by AFM. After irradiation, this roughness increased to 60-70 nm, with the films developing discrete microstructural features: small grains (~3 $\mu$m), along with larger circular (up to 40 $\mu$m) and linear formations with non-uniform composition according to the SEM, AFM and EDX results. The irradiation caused significant restructuring of the UO$_2$ films that was manifested in significant filmsubstrate mixing, observed through EDX analysis. Diffusion of Al from the substrate into the film in unirradiated samples was also observed.