Figure2c,e: Detected spatial distribution, length and orientation of isolated InAs nanowires in a 1 × 1 mm^2 region.

Figure 4: Transfer characteristics of automatically fabricated nanowire devices with (a) 0.5 μm channel length, (b) 1.0 μm channel length, (c) 2.0 μm channel length, and (d) 2.5 μm channel length at source–drain voltage VDS = 10 mV. (e) Statistical data of nanowire device misalignment measured from the center of the nanowire to the center of the electrode pattern. Statistical data of (f) on/off ratio, (g) peak current, and (h) threshold voltage measured in automatically fabricated nanowire devices.

Figure S8: Statistical data of (a) mobility and (b) hysteresis measured in automatically fabricated nanowire devices.