Enhanced switching stability in Ta<inf>2</inf>O<inf>5</inf> resistive RAM by fluorine doping

Sedghi, N; Li, H; Brunell, IF; Dawson, K; Guo, Y; Potter, RJ; Gibbon, JT; Dhanak, VR; Zhang, WD; Zhang, JF; Hall, S; Robertson, J; Chalker, PR

doi:10.1063/1.4991879

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