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Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images

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cam.issuedOnline2009-09-15
dc.contributor.authorOliver, RA
dc.contributor.authorSumner, J
dc.contributor.authorKappers, MJ
dc.contributor.authorHumphreys, CJ
dc.contributor.orcidOliver, Rachel [0000-0003-0029-3993]
dc.contributor.orcidHumphreys, Colin [0000-0001-5053-3380]
dc.date.accessioned2018-12-01T00:30:50Z
dc.date.available2018-12-01T00:30:50Z
dc.date.issued2009-09-01
dc.description.abstract<jats:p>During annealing, the morphologies of thin InGaN epilayers have been observed to change from a terraced structure to a network of interlinking InGaN strips separated by troughs. This change in morphology may contribute to high efficiencies in some GaN-based light emitting diodes (LEDs) if the InGaN is exposed to elevated temperatures without a protective GaN capping layer. Here, we investigate the changes in morphology which occur when InGaN epilayers are annealed at their growth temperature under NH3, N2, and a small H2 flux. We observe that while the layers initially roughen, more extended anneals lead to the surface becoming smooth and terraced once again. Power spectral density analysis of atomic force microscopy data is used to show that the dominant mechanism for roughening is loss of material from pre-existing pits, while the dominant smoothening mechanism is surface diffusion. This mechanistic analysis may be relevant to the growth of InGaN quantum wells in LED structures.</jats:p>
dc.identifier.doi10.17863/CAM.33515
dc.identifier.eissn1089-7550
dc.identifier.issn0021-8979
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/286203
dc.language.isoeng
dc.publisherAIP Publishing
dc.publisher.urlhttp://dx.doi.org/10.1063/1.3212971
dc.subjectannealing
dc.subjectatomic force microscopy
dc.subjectgallium compounds
dc.subjectIII-V semiconductors
dc.subjectindium compounds
dc.subjectlight emitting diodes
dc.subjectsemiconductor epitaxial layers
dc.subjectsemiconductor quantum wells
dc.subjectsurface diffusion
dc.subjectvapour phase epitaxial growth
dc.subjectwide band gap semiconductors
dc.subjectTHREADING DISLOCATIONS
dc.subjectGAN
dc.subjectGROWTH
dc.subjectWELLS
dc.titleMorphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images
dc.typeArticle
prism.issueIdentifier5
prism.publicationDate2009
prism.publicationNameJ APPL PHYS
prism.volume106
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/E035167/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/G042330/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/H019324/1)
rioxxterms.licenseref.startdate2009-09-28
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.typeJournal Article/Review
rioxxterms.versionVoR
rioxxterms.versionofrecord10.1063/1.3212971

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