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  CMOS compatible electrode materials selection in oxide-based memory devices 

  Zhuo, VYQ; Li, M; Guo, Y; Wang, W; Yang, Y; Jiang, Y; Robertson, J (AIP Publishing, 2016-07-14)

  Electrode materials selection guidelines for oxide-based memory devices are constructed from the combined knowledge of observed device operation characteristics, ab-initio calculations, and nano-material characterization. ...
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  Multi-band magnetotransport in exfoliated thin films of CuxBi2Se3 

  Alexander-Webber, JA; Huang, J; Beilsten-Edmands, J; Cermak, P; Drasar, C; Nicholas, RJ; Coldea, AI (IOP Publishing, 2018)

  We report magnetotransport studies in thin (<100nm) exfoliated films of CuₓBi₂Se₃ and we detect an unusual electronic transition at low temperatures. Bulk crystals show weak superconductivity with Tc~3.5K and a possible ...
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  Deep Subthreshold TFT Operation and Design Window for Analog Gain Stages 

  Cheng, X; Lee, S; Nathan, A (Institute of Electrical and Electronics Engineers (IEEE), 2018)

  The intrinsic gain (Ai), transconductance efficiency (gm/IDS) and cut-off frequency (fT) are analysed for thin film transistors (TFTs) operating in the deep subthreshold region to assess the impact of device variations on ...
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  Understanding and Controlling Cu-Catalyzed Graphene Nucleation: The Role of Impurities, Roughness, and Oxygen Scavenging 

  Braeuninger-Weimer, P; Brennan, B; Pollard, AJ; Hofmann, S (American Chemical Society, 2016-12-27)

  The mechanism by which Cu catalyst pretreatments control graphene nucleation density in scalable chemical vapor deposition (CVD) is systematically explored. The intrinsic and extrinsic carbon contamination in the Cu foil ...

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