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dc.contributor.authorPristovsek, Markus
dc.contributor.authorHan, Yisong
dc.contributor.authorZhu, Tongtong
dc.contributor.authorFrentrup, Martin
dc.contributor.authorKappers, Menno
dc.contributor.authorHumphreys, Colin
dc.contributor.authorKozlowski, Grzegorz
dc.contributor.authorMaaskant, Pleun
dc.contributor.authorCorbett, Brian
dc.date.accessioned2014-11-20T11:35:56Z
dc.date.available2014-11-20T11:35:56Z
dc.date.issued2015-05
dc.identifier.citationPhysica Status Solidi (b) Volume 252, Issue 5, pages 1104–1108, May 2015. doi: 10.1002/pssb.201451591
dc.identifier.issn1521-3951
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/246423
dc.description.abstractWe report on the growth of semi-polar GaN (11[Formula: see text]2) templates on patterned Si (113) substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls. Subsequently an AlN layer to prevent meltback etching, an AlGaN layer for stress management, and finally two GaN layers were deposited. Total thicknesses up to 5 [Formula: see text]m were realised without cracks in the layer. Transmission electron microscopy showed that most dislocations propagate along [0001] direction and hence can be covered by overgrowth from the next trench. The defect densities were below [Formula: see text] and stacking fault densities less than 100 cm [Formula: see text]. These numbers are similar to reports on patterned r-plane sapphire. Typical X-ray full width at half maximum (FHWM) were 500" for the asymmetric (00.6) and 450" for the (11.2) reflection. These FHWMs were 50 % broader than reported for patterned r-plane sapphire which is attributed to different defect structures and total thicknesses. The surface roughness shows strong variation on templates. For the final surface roughness the roughness of the sidewalls of the GaN ridges at the time of coalescence are critical.
dc.description.sponsorshipThis work was supported by EU- FP7 ALIGHT No. NMP-2011-280587 and the UK En- gineering and Physical Sciences Research Council No. EP/I012591/1.
dc.languageEnglish
dc.language.isoen
dc.publisherWiley-VCH Verlag
dc.rightsAttribution 2.0 UK: England & Wales
dc.rights.urihttp://creativecommons.org/licenses/by/2.0/uk/
dc.subjectMOVPE growth
dc.subjectsemi-polar GaN
dc.subjectpatterned substrate
dc.subjectSilicon (113)
dc.titleLow defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.
dc.typeArticle
dc.description.versionThis is the final version. It was first published by http://onlinelibrary.wiley.com/doi/10.1002/pssb.201451591/abstract
prism.endingPage1108
prism.publicationDate2014
prism.publicationNamePhys Status Solidi B Basic Solid State Phys
prism.startingPage1104
prism.volume252
dc.rioxxterms.funderEU FP7
dc.rioxxterms.funderEPSRC
dc.rioxxterms.projectidNMP-2011-280587
dc.rioxxterms.projectidEP/I012591/1
dcterms.dateAccepted2014-10-31
rioxxterms.versionofrecord10.1002/pssb.201451591
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.licenseref.startdate2014-12-05
dc.contributor.orcidZhu, Tongtong [0000-0002-9481-8203]
dc.contributor.orcidHumphreys, Colin [0000-0001-5053-3380]
dc.identifier.eissn1521-3951
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/I012591/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M010589/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/H019324/1)
cam.issuedOnline2014-12-05


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Attribution 2.0 UK: England & Wales
Except where otherwise noted, this item's licence is described as Attribution 2.0 UK: England & Wales