Show simple item record

dc.contributor.authorDawson, Jamesen
dc.contributor.authorGuo, Yen
dc.contributor.authorRobertson, Johnen
dc.date.accessioned2016-02-03T15:19:53Z
dc.date.available2016-02-03T15:19:53Z
dc.date.issued2015-09-25en
dc.identifier.citationApplied Physics Letters 2016, 107, 122110. DOI: 10.1063/1.4931751en
dc.identifier.issn0003-6951
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/253626
dc.description.abstractEnergetics for a variety of intrinsic defects in NiO are calculated using state-of-the-art ab initio hybrid density functional theory calculations. At the O-rich limit, Ni vacancies are the lowest cost defect for all Fermi energies within the gap, in agreement with the well-known p-type behaviour of NiO. However, the ability of the metal electrode in a resistive random access memory metal-oxide-metal setup to shift the oxygen chemical potential towards the O-poor limit results in unusual NiO behaviour and O vacancies dominating at lower Fermi energy levels. Calculated band diagrams show that O vacancies in NiO are positively charged at the operating Fermi energy giving it the advantage of not requiring a scavenger metal layer to maximise drift. Ni and O interstitials are generally found to be higher in energy than the respective vacancies suggesting that significant recombination of O vacancies and interstitials does not take place as proposed in some models of switching behaviour.
dc.description.sponsorshipThe authors thank the Engineering and Physical Sciences Research Council for funding from EPSRC Grant No. EP/M009297.
dc.languageEnglishen
dc.language.isoenen
dc.publisherAIP Publishing
dc.rightsAttribution-NonCommercial 2.0 UK: England & Wales*
dc.rights.urihttp://creativecommons.org/licenses/by-nc/2.0/uk/*
dc.titleEnergetics of Intrinsic Defects in the Resistive Random Access Memory Material NiOen
dc.typeArticle
dc.description.versionThis is the accepted manuscript. The final version is available at http://scitation.aip.org/content/aip/journal/apl/107/12/10.1063/1.4931751.en
prism.number122110en
prism.publicationDate2015en
prism.publicationNameApplied Physics Lettersen
prism.volume107en
dc.rioxxterms.funderEPSRC
dc.rioxxterms.projectidEP/M009297
rioxxterms.versionofrecord10.1063/1.4931751en
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2015-09-25en
dc.identifier.eissn1077-3118
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (EP/M009297/1)


Files in this item

Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record

Attribution-NonCommercial 2.0 UK: England & Wales
Except where otherwise noted, this item's licence is described as Attribution-NonCommercial 2.0 UK: England & Wales