Zinc tin oxide thin film transistors produced by a high rate reactive sputtering: Effect of tin composition and annealing temperatures
Accepted version
Peer-reviewed
Repository URI
Repository DOI
Change log
Authors
Abstract
Amorphous zinc tin oxides (a-ZTO), which are stoichiometrically close to the Zn
Description
Keywords
Journal Title
Conference Name
Journal ISSN
1862-6319
Volume Title
Publisher
Publisher DOI
Sponsorship
Department for Business, Energy and Industrial Strategy (EP/M023532/1)