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dc.contributor.authorHan, Sanggilen
dc.contributor.authorFlewitt, Andrewen
dc.date.accessioned2017-06-13T15:08:30Z
dc.date.available2017-06-13T15:08:30Z
dc.date.issued2017-07-18en
dc.identifier.issn2045-2322
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/264749
dc.description.abstractA quantitative and analytical investigation on the conduction mechanism in p-type cuprous oxide (Cu$_{2}$O) thin films is performed based on analysis of the relative dominance of trap-limited and grain-boundary-limited conduction. It is found that carrier transport in as-deposited Cu$_{2}$O is governed by grain-boundary-limited conduction (GLC), while after high-temperature annealing, GLC becomes insignificant and trap-limited conduction (TLC) dominates. This suggests that the very low Hall mobility of as-deposited Cu$_{2}$O is due to significant GLC, and the Hall mobility enhancement by high-temperature annealing is determined by TLC. Evaluation of the grain size and the energy barrier height at the grain boundary shows an increase in the grain size and a considerable decrease in the energy barrier height after high-temperature annealing, which is considered to be the cause of the significant reduction in the GLC effect. Additionally, the density of copper vacancies was extracted; this quantitatively shows that an increase in annealing temperature leads to a reduction in copper vacancies.
dc.description.sponsorshipThe support of this work by the Engineering and Physical Sciences Research Council (EPSRC) through project EP/M013650/1 is acknowledged.
dc.language.isoenen
dc.publisherNature Publishing Group
dc.rightsAttribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleAnalysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu$_{2}$O Thin Filmsen
dc.typeArticle
prism.number5766en
prism.publicationDate2017en
prism.publicationNameScientific Reportsen
prism.volume7en
dc.identifier.doi10.17863/CAM.10270
dcterms.dateAccepted2017-06-05en
rioxxterms.versionofrecord10.1038/s41598-017-05893-xen
rioxxterms.versionAMen
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/en
rioxxterms.licenseref.startdate2017-07-18en
dc.contributor.orcidHan, Sanggil [0000-0001-8588-5466]
dc.contributor.orcidFlewitt, Andrew [0000-0003-4204-4960]
dc.identifier.eissn2045-2322
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (EP/M013650/1)
cam.orpheus.successThu Jan 30 12:53:45 GMT 2020 - The item has an open VoR version.*
rioxxterms.freetoread.startdate2100-01-01


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Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International