dc.contributor.author Han, Sanggil en dc.contributor.author Flewitt, Andrew en dc.date.accessioned 2017-06-13T15:08:30Z dc.date.available 2017-06-13T15:08:30Z dc.date.issued 2017-07-18 en dc.identifier.issn 2045-2322 dc.identifier.uri https://www.repository.cam.ac.uk/handle/1810/264749 dc.description.abstract A quantitative and analytical investigation on the conduction mechanism in p-type cuprous oxide (Cu$_{2}$O) thin films is performed based on analysis of the relative dominance of trap-limited and grain-boundary-limited conduction. It is found that carrier transport in as-deposited Cu$_{2}$O is governed by grain-boundary-limited conduction (GLC), while after high-temperature annealing, GLC becomes insignificant and trap-limited conduction (TLC) dominates. This suggests that the very low Hall mobility of as-deposited Cu$_{2}$O is due to significant GLC, and the Hall mobility enhancement by high-temperature annealing is determined by TLC. Evaluation of the grain size and the energy barrier height at the grain boundary shows an increase in the grain size and a considerable decrease in the energy barrier height after high-temperature annealing, which is considered to be the cause of the significant reduction in the GLC effect. Additionally, the density of copper vacancies was extracted; this quantitatively shows that an increase in annealing temperature leads to a reduction in copper vacancies. dc.description.sponsorship The support of this work by the Engineering and Physical Sciences Research Council (EPSRC) through project EP/M013650/1 is acknowledged. dc.language.iso en en dc.publisher Nature Publishing Group dc.rights Attribution 4.0 International en dc.rights.uri http://creativecommons.org/licenses/by/4.0/ en dc.title Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu$_{2}$O Thin Films en dc.type Article prism.number 5766 en prism.publicationDate 2017 en prism.publicationName Scientific Reports en prism.volume 7 en dc.identifier.doi 10.17863/CAM.10270 dcterms.dateAccepted 2017-06-05 en rioxxterms.versionofrecord 10.1038/s41598-017-05893-x en rioxxterms.version AM en rioxxterms.licenseref.uri http://creativecommons.org/licenses/by/4.0/ en rioxxterms.licenseref.startdate 2017-07-18 en dc.contributor.orcid Han, Sanggil [0000-0001-8588-5466] dc.contributor.orcid Flewitt, Andrew [0000-0003-4204-4960] dc.identifier.eissn 2045-2322 rioxxterms.type Journal Article/Review en pubs.funder-project-id EPSRC (EP/M013650/1) cam.orpheus.success Thu Jan 30 12:53:45 GMT 2020 - The item has an open VoR version. * rioxxterms.freetoread.startdate 2100-01-01
﻿

### This item appears in the following Collection(s)

Except where otherwise noted, this item's licence is described as Attribution 4.0 International