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A Lewis-Acid Monopolar Gate Dielectric for All-Inkjet-Printed Highly Bias-Stress Stable Organic Transistors

Accepted version
Peer-reviewed

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Abstract

A Lewis-acid monopolar polymer with both hydrophobicity and lipophilicity is used as the gate dielectric for all-inkjet-printed organic thin-film transistors. The hydrophobicity of this polymer prevents water molecules from migrating and being trapped in the gate dielectric, while its lipophilicity allows good wetting by organic solvents for further deposition of other functional layers. These organic thin-film transistors demonstrate high bias-stress stability under both positive and negative bias in ambient air. This study unlocks the potential of all-inkjet-printed organic thin-film transistors for real-world low-cost large-area applications.

Description

Journal Title

Advanced Electronic Materials

Conference Name

Journal ISSN

2199-160X
2199-160X

Volume Title

3

Publisher

Wiley-Blackwell

Rights and licensing

Except where otherwised noted, this item's license is described as http://www.rioxx.net/licenses/all-rights-reserved
Sponsorship
British Council in India (IND/CONT/E/13-14/640)
European Commission Horizon 2020 (H2020) Marie Sk?odowska-Curie actions (645760)
European Commission Horizon 2020 (H2020) Research Infrastructures (RI) (692373)
The authors acknowledge the support of the China Scholarship Council, Kangqiao Xingang Photonics Co. Ltd. (RG74597) and the British Council/DST UKIERI (RG72045).