Temperature-dependent fine structure splitting in InGaN quantum dots
Applied Physics Letters
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Wang, T., Puchtler, T., Zhu, T., Jarman, J., Kocher, C., Oliver, R., & Taylor, R. (2017). Temperature-dependent fine structure splitting in InGaN quantum dots. Applied Physics Letters, 111 (5)https://doi.org/10.17863/CAM.11970
We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. At 5 K, a statistical average splitting of 443 ± 132 eV has been found based on 81 quantum dots. The degree of fine structure splitting stays relatively constant for temperatures less than 100 K, and only increases above that temperature. At 200 K, we find that the fine structure splitting ranges between 2 ~ 12 meV, which is an order of magnitude higher than that at low temperatures. Our investigations also show that phonon interactions at high temperatures might have a correlation with the degree of exchange interactions. The large fine structure splitting at 200 K makes it easier to isolate the individual components of the polarized emission spectrally, increasing the effective degree of polarization for potential on-chip applications of polarized single photon sources.
quantum dots, polarization, exchange interactions, quantum acoustics, semiconductor device fabrication
Is supplemented by: https://doi.org/10.5287/bodleian:QRgg1nyJg
This research was supported by the Engineering and Physical Sciences Research Council (EPSRC) U.K. (Grant No. EP/M012379/1 and EP/M011682/1) T.W. is grateful for the award of a National Science Scholarship (NSS) as PhD funding by the Singapore Agency for Science, Technology and Research (A*STAR). C.C.K. is grateful for the support provided by a Clarendon Scholarship and a Mary Frances and Philip Wagley Graduate Scholarship. R.A.O. is grateful to the Royal Academy of Engineering and the Leverhulme Trust for a Senior Research Fellowship.
Royal Academy of Engineering (RAEng) (LSRF1415\11\41)
This record's DOI: https://doi.org/10.17863/CAM.11970
This record's URL: https://www.repository.cam.ac.uk/handle/1810/267240
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