Temperature-dependent fine structure splitting in InGaN quantum dots
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Publication Date
2017-07-31Journal Title
Applied Physics Letters
ISSN
0003-6951
Publisher
AIP
Volume
111
Issue
5
Language
English
Type
Article
This Version
AM
Metadata
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Wang, T., Puchtler, T., Zhu, T., Jarman, J., Kocher, C., Oliver, R., & Taylor, R. (2017). Temperature-dependent fine structure splitting in InGaN quantum dots. Applied Physics Letters, 111 (5) https://doi.org/10.1063/1.4996861
Abstract
We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. At 5 K, a statistical average splitting of 443 ± 132 eV has been found based on 81 quantum dots. The degree of fine structure splitting stays relatively constant for temperatures less than 100 K, and only increases above that temperature. At 200 K, we find that the fine structure splitting ranges between 2 ~ 12 meV, which is an order of magnitude higher than that at low temperatures. Our investigations also show that phonon interactions at high temperatures might have a correlation with the degree of exchange interactions. The large fine structure splitting at 200 K makes it easier to isolate the individual components of the polarized emission spectrally, increasing the effective degree of polarization for potential on-chip applications of polarized single photon sources.
Keywords
quantum dots, polarization, exchange interactions, quantum acoustics, semiconductor device fabrication
Relationships
Is supplemented by: https://doi.org/10.5287/bodleian:QRgg1nyJg
Sponsorship
This research was supported by the Engineering and Physical Sciences Research Council (EPSRC) U.K. (Grant No.
EP/M012379/1 and EP/M011682/1) T.W. is grateful for the award of a National Science Scholarship (NSS) as PhD funding
by the Singapore Agency for Science, Technology and Research (A*STAR). C.C.K. is grateful for the support provided by a
Clarendon Scholarship and a Mary Frances and Philip Wagley Graduate Scholarship. R.A.O. is grateful to the Royal
Academy of Engineering and the Leverhulme Trust for a Senior Research Fellowship.
Funder references
Engineering and Physical Sciences Research Council (EP/M011682/1)
Royal Academy of Engineering (RAEng) (LSRF1415\11\41)
Engineering and Physical Sciences Research Council (EP/H047816/1)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Identifiers
External DOI: https://doi.org/10.1063/1.4996861
This record's URL: https://www.repository.cam.ac.uk/handle/1810/267240
Rights
Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International
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