Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires.
Puchtler, Tim J
Ren, Christopher X
Oliver, Rachel Angharad
Taylor, Robert A
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Puchtler, T. J., Wang, T., Ren, C. X., Tang, F., Oliver, R. A., Taylor, R. A., & Zhu, T. (2016). Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires.. Nano Lett, 16 (12), 7779-7785. https://doi.org/10.1021/acs.nanolett.6b03980
We demonstrate single-photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved microphotoluminescence (μPL), and photon autocorrelation experiments give a thorough evaluation of the QD structural and optical properties. The QD exhibits antibunched emission up to 100 K, with a measured autocorrelation function of g(2)(0) = 0.28(0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 ± 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 ± 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.
InGaN, m-Plane, polarized, quantum dot, single photon
External DOI: https://doi.org/10.1021/acs.nanolett.6b03980
This record's URL: https://www.repository.cam.ac.uk/handle/1810/268510
Attribution 4.0 International
Licence URL: http://creativecommons.org/licenses/by/4.0/
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