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Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors.

Accepted version
Peer-reviewed

Type

Article

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Authors

Casalino, Maurizio 
Sassi, Ugo 
Goykhman, Ilya 
Eiden, Anna 
Lidorikis, Elefterios 

Abstract

We report vertically illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. We get a wavelength-dependent photoresponse with external (internal) responsivity ∼20 mA/W (0.25A/W). The spectral selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for optical communications, coherence optical tomography, and light-radars.

Description

Keywords

graphene, internal photoemission, photodetectors, resonant cavity

Journal Title

ACS Nano

Conference Name

Journal ISSN

1936-0851
1936-086X

Volume Title

11

Publisher

American Chemical Society (ACS)
Sponsorship
Engineering and Physical Sciences Research Council (EP/K01711X/1)
Engineering and Physical Sciences Research Council (EP/K017144/1)
Engineering and Physical Sciences Research Council (EP/L016087/1)
European Research Council (319277)