High-performance transistors for bioelectronics through tuning of channel thickness.
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Authors
Rivnay, Jonathan
Leleux, Pierre
Ferro, Marc
Sessolo, Michele
Williamson, Adam
Koutsouras, Dimitrios A
Khodagholy, Dion
Ramuz, Marc
Strakosas, Xenofon
Benar, Christian
Badier, Jean-Michel
Bernard, Christophe
Publication Date
2015-05Journal Title
Sci Adv
ISSN
2375-2548
Publisher
American Association for the Advancement of Science (AAAS)
Volume
1
Issue
4
Pages
e1400251
Language
eng
Type
Article
This Version
VoR
Physical Medium
Electronic-eCollection
Metadata
Show full item recordCitation
Rivnay, J., Leleux, P., Ferro, M., Sessolo, M., Williamson, A., Koutsouras, D. A., Khodagholy, D., et al. (2015). High-performance transistors for bioelectronics through tuning of channel thickness.. Sci Adv, 1 (4), e1400251. https://doi.org/10.1126/sciadv.1400251
Abstract
Despite recent interest in organic electrochemical transistors (OECTs), sparked by their straightforward fabrication and high performance, the fundamental mechanism behind their operation remains largely unexplored. OECTs use an electrolyte in direct contact with a polymer channel as part of their device structure. Hence, they offer facile integration with biological milieux and are currently used as amplifying transducers for bioelectronics. Ion exchange between electrolyte and channel is believed to take place in OECTs, although the extent of this process and its impact on device characteristics are still unknown. We show that the uptake of ions from an electrolyte into a film of poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate ( PEDOT: PSS) leads to a purely volumetric capacitance of 39 F/cm(3). This results in a dependence of the transconductance on channel thickness, a new degree of freedom that we exploit to demonstrate high-quality recordings of human brain rhythms. Our results bring to the forefront a transistor class in which performance can be tuned independently of device footprint and provide guidelines for the design of materials that will lead to state-of-the-art transistor performance.
Identifiers
External DOI: https://doi.org/10.1126/sciadv.1400251
This record's URL: https://www.repository.cam.ac.uk/handle/1810/274383
Rights
Attribution-NonCommercial 4.0 International, Attribution-NonCommercial 4.0 International
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